? 2009 ixys corporation, all rights reserved features z international standard packages jedec to-247ad & to-268 z igbt and anti-parallel fred for resonant power supplies - induction heating - rice cookers z mos gate turn-on z fast recovery expitaxial diode (fred) - soft recovery with low i rm advantages z saves space (two devices in one package) z easy to mount with 1 screw (isolated mounting screw hole) z reduces assembly time and cost applications ? switch-mode and resonant-mode power supplies ? uninterruptible power supplies (ups) ? dc choppers ? ac motor speed drives ? dc servo and robot drives ds98988g(08/09) IXGH28N120BD1 ixgt28n120bd1 symbol test conditions maximum ratings v ces t j = 25c to 150c 1200 v v cgr t j = 25c to 150c, r ge = 1m 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c ( chip capability ) 50 a i c100 t c = 100c 28 a i f90 t c = 90c 10 a i cm t c = 25c, 1ms 150 a ssoa v ge = 15v, t j = 125c, r g = 5 i cm = 120 a (rbsoa) clamped inductive load 0.8 ? v ces p c t c = 25c 250 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062 in.) from case for 10 260 c m d mounting torque (to-247) 1.13/10 nm/lb.in. weight to-247 6 g to-286 4 g high voltage igbt w/ diode v ces = 1200v i c25 = 50a v ce(sat) 3.5v t fi(typ) = 170ns symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 2.5 5.0 v i ces v ce = v ces , v ge = 0v 50 a t j = 125c, note1 250 a i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 28a, v ge = 15v, note 2 2.9 3.5 v t j = 125c 2.8 v to-247ad (ixgh) g = gate c = collector e = emitter tab = collector to-268 (ixgt) (tab) g c e c (tab) g e
ixys reserves the right to change limits, test conditions and dimensions. IXGH28N120BD1 ixgt28n120bd1 reverse diode (fred) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v f i f = 10a, v ge = 0v, note 2 3.2 v t j = 100c 2.3 v i rm 14 a t rr 120 ns t rr 40 ns r thjc 2.5 c/w i f = 10a, v ge = 0v, -di f /dt = 400a/ s, v r = 600v symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. g fs i c = 28a, v ce = 10v, note 2 15 23 s c ies 1700 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 130 pf c res 45 pf q g 92 nc q ge i c = 28a, v ge = 15v, v ce = 0.5 ? v ces 13 nc q gc 35 nc t d(on) 30 ns t ri 20 ns t d(off) 210 280 ns t fi 170 320 ns e off 2.2 5.0 mj t d(on) 35 ns t ri 28 ns e on 1.4 mj t d(off) 250 ns t fi 340 ns e off 4.6 mj r thjc 0.50 c/w r thck (to-247) 0.21 c/w inductive load, t j = 25c i c = 28a, v ge = 15v v ce = 0.8 ? v ces , r g = 5 note 3 inductive load, t j = 125c i c = 28a, v ge = 15v v ce = 0.8 ? v ces , r g = 5 note 3 i f = 1a, v ge = 0v, -di f /dt = 100a/ s, v r = 30v notes: 1. part must be heatsunk for high-temp i ces measurement. 2. pulse test, t 300 s, duty cycle, d 2%. 3. switching times & energy loses may increase for higher v ce (clamp), t j or r g . dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 (ixgh) outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source tab - drain to-268 (ixgt) outline ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537
? 2009 ixys corporation, all rights reserved fig. 2. extended output characteristics @ 25 o c 0 30 60 90 120 150 180 210 240 0 2 4 6 8 1012 14161820 v c e - volts i c - amperes v ge = 17v 7v 9v 11v 13v 15v fig. 3. output characteristics @ 125 o c 0 7 14 21 28 35 42 49 56 11.522.533.544.55 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 1. output characteristics @ 25 o c 0 7 14 21 28 35 42 49 56 11.522.533.544.55 v c e - volts i c - amperes v ge = 15v 13v 11v 5v 7v 9v fig. 4. dependence of v ce( sat) on temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v c e (sat) - normalize d i c = 28a i c = 14a v ge = 15v i c = 56a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 2 3 4 5 6 7 8 6 7 8 9 10 11 12 13 14 15 16 17 v g e - volts v c e - volts t j = 25 o c i c = 56a 28a 14a fig. 6. input admittance 0 10 20 30 40 50 60 70 80 90 100 45678910 v g e - volts i c - amperes t j = 125 o c 25 o c -40 o c IXGH28N120BD1 ixgt28n120bd1
ixys reserves the right to change limits, test conditions and dimensions. IXGH28N120BD1 ixgt28n120bd1 fig. 7. transconductance 0 5 10 15 20 25 30 35 0 102030405060708090100 i c - amperes g f s - siemens t j = -40 o c 25 o c 125 o c fig. 8. dependence of turn-off energy loss on r g 0 2 4 6 8 10 12 14 16 18 0 1020 3040 50 6070 8090100 r g - ohms e o f f - millijoule s i c = 14 a t j = 125 o c v ge = 15v v ce = 960v i c = 28a i c = 56a fig. 9. dependence of turn-off energy loss on i c 0 1 2 3 4 5 6 7 8 9 10 10 15 20 25 30 35 40 45 50 55 60 i c - amperes e o f f - millijoule s r g = 5 ? v ge = 15v v ce = 960v t j = 125 o c t j = 25 o c fig. 10. dependence of turn-off energy loss on temperature 0 1 2 3 4 5 6 7 8 9 10 11 25 35 45 55 65 75 85 95 105 115 125 t j - degr ees centigr ade e o f f - millijoule s i c = 56a r g = 5 ? v ge = 15v v ce = 960v i c = 28a i c = 14a fig. 11. dependence of turn-off sw itching time on r g 200 400 600 800 1000 1200 1400 0 1020 3040 5060 7080 90100 r g - ohms switching time - nanoseconds i c = 14a t d(off) t fi - - - - - - t j = 125oc v ge = 15v v ce = 960v i c = 28a i c = 56a fig. 12. dependence of turn-off sw itching time on i c 100 150 200 250 300 350 400 450 10 15 20 25 30 35 40 45 50 55 60 i c - amperes switching time - nanoseconds t d(off) t fi - - - - - - r g = 5 ? v ge = 15v v ce = 960v t j = 125 o c t j = 25 o c
? 2009 ixys corporation, all rights reserved fig. 17. maxim um transient therm al resistance 0.10 1.00 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - oc / w 0.50 fig. 14. gate charge 0 2 4 6 8 10 12 14 16 0 1020 3040 5060 7080 90100 q g - nanocoulombs v g e - volts v ce = 600v i c = 28a i g = 10ma fig. 15. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v c e - volts capacitance - p f c ies c oes c res f = 1 mhz fig. 13. dependence of turn-off sw itching time on temperature 100 150 200 250 300 350 400 450 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade switching time - nanoseconds i c = 14a t d(off) t fi - - - - - - r g = 5 ? v ge = 15v v ce = 960v i c = 28a i c = 14a i c = 56a i c = 56a fig. 16. reverse-bias safe operating area 0 20 40 60 80 100 120 140 100 300 500 700 900 1100 1300 v c e - volts i c - amperes t j = 125 o c r g = 5 ? dv/dt < 10v/ns IXGH28N120BD1 ixgt28n120bd1
ixys reserves the right to change limits, test conditions and dimensions. IXGH28N120BD1 ixgt28n120bd1 200 600 1000 0 400 800 90 100 110 120 130 140 150 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 04080120160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 40 80 120 0.0 0.4 0.8 1.2 v fr di f /dt v 200 600 1000 0 400 800 0 10 20 30 40 100 1000 0 500 1000 1500 2000 01234 0 5 10 15 20 25 30 i rm q r i f a v f -di f /dt -di f /dt a/ s a v nc a/ s a/ s t rr ns t fr z thjc a/ s s dsep 8-12a i f = 20a i f = 10a i f = 5a t vj = 100c v r = 600v t vj = 100c i f = 10a fig. 20. peak reverse current i rm versus -di f /dt fig. 19. reverse recovery charge q r versus -di f /dt fig. 18. forward current i f versus v f t vj = 100c v r = 600v t vj = 100c v r = 600v i f = 20a i f = 10a i f = 5a q r i rm fig. 21. dynamic parameters q r , i rm versus t vj fig. 22. recovery time t rr versus -di f /dt fig. 23. peak forward voltage v fr and t fr versus di f /dt i f = 20a i f = 10a i f = 5a t fr v fr fig. 24. transient thermal resistance junction to case constants for z thjc calculation: ir thi (k/w) t i (s) 1 1.449 0.0052 2 0.558 0.0003 3 0.493 0.017 t vj = 25c t vj =100c t vj =150c ixys ref: g_28n120b(5z)4-21-04-a
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